| Выява | Ключавая частка / Вытворца | Апісанне / PDF | Колькасць / RFQ |
|---|---|---|---|
 |
Samsung Semiconductor |
4 Gb 256M x 16 1866 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production. |
24999шт шт |
|
Samsung Semiconductor |
4 Gb 256M x 16 1866 Mbps 1.35 V -40 ~ 105 °C 96FBGA Mass Production. |
21860шт шт |
|
Samsung Semiconductor |
4 Gb 256M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production. |
20248шт шт |
|
Samsung Semiconductor |
4 Gb 256M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production. |
21593шт шт |
|
Samsung Semiconductor |
4 Gb 256M x 16 1333 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production. |
20056шт шт |
|
Samsung Semiconductor |
4 Gb 256M x 16 1600 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production. |
21447шт шт |
|
Samsung Semiconductor |
4 Gb 256M x 16 1866 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production. |
19892шт шт |
|
Samsung Semiconductor |
4 Gb 256M x 16 2133 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production. |
21068шт шт |
|
Samsung Semiconductor |
4 Gb 512M x 8 1600 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production. |
18472шт шт |
|
Samsung Semiconductor |
4 Gb 512M x 8 1866 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production. |
15107шт шт |
|
Samsung Semiconductor |
4 Gb 256M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production. |
19193шт шт |
|
Samsung Semiconductor |
4 Gb 256M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production. |
23462шт шт |
|
Samsung Semiconductor |
4 Gb 512M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production. |
19442шт шт |
|
Samsung Semiconductor |
4 Gb 512M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production. |
25880шт шт |
|
Samsung Semiconductor |
4 Gb 512M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production. |
17661шт шт |
Старонкі класіфікацыі
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