Дыёды - Мастовыя выпрамнікі, KBP301GC2, KBP207GC2, 184

Ключавая частка / Вытворца	Апісанне / PDF	Колькасць / RFQ
KBP207G C2G Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 1KV 2A KBP.	12454шт шт
KBP301G C2 Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 50V 3A KBP.	4085шт шт
KBP207G C2 Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 1KV 2A KBP.	12453шт шт
KBP206G C2G Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 800V 2A KBP.	4085шт шт
KBP206G C2 Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 800V 2A KBP.	12453шт шт
KBP205G C2G Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 600V 2A KBP.	12453шт шт
KBP205G C2 Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 600V 2A KBP.	12451шт шт
KBP204G C2G Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 400V 2A KBP.	12451шт шт
KBP204G C2 Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 400V 2A KBP.	12451шт шт
KBP203G C2 Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 200V 2A KBP.	12451шт шт
KBP203G C2G Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 200V 2A KBP.	12450шт шт
KBP202G C2G Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 100V 2A KBP.	12450шт шт
KBP202G C2 Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 100V 2A KBP.	12450шт шт
KBP201G C2G Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 50V 2A KBP.	12450шт шт
KBP157G C2G Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 1KV 1.5A KBP.	4083шт шт
KBP201G C2 Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 50V 2A KBP.	12449шт шт
KBP157G C2 Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 1KV 1.5A KBP.	12449шт шт
KBP156G C2G Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 800V 1.5A KBP.	12449шт шт
KBP156G C2 Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 800V 1.5A KBP.	12449шт шт
KBP155G C2G Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 600V 1.5A KBP.	12447шт шт

Дыёды - Мастовыя выпрамнікі

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