Дыёды - Мастовыя выпрамнікі, MSD200-12, MSD160-08, 206

Ключавая частка / Вытворца	Апісанне / PDF	Колькасць / RFQ
MSD200-08 Microsemi Corporation	BRIDGE RECT 3PHASE 800V 200A M3.	12308шт шт
MSD200-12 Microsemi Corporation	BRIDGE RECT 3PHASE 1.2KV 200A M3.	12308шт шт
MSD160-08 Microsemi Corporation	BRIDGE RECT 3PHASE 800V 160A M3.	12307шт шт
MSD160-12 Microsemi Corporation	BRIDGE RECT 3PHASE 1.2KV 160A M3.	12307шт шт
MSD130-08 Microsemi Corporation	BRIDGE RECT 3PHASE 800V 130A M3.	12307шт шт
MSD130-12 Microsemi Corporation	BRIDGE RECT 3PHASE 1.2KV 130A M3.	12307шт шт
MB10M-G Comchip Technology	BRIDGE RECT 1PHASE 1KV 800MA MBM.	12307шт шт
MSD100-12 Microsemi Corporation	BRIDGE RECT 3PHASE 1.2KV 100A M3.	12305шт шт
MB05M-G Comchip Technology	BRIDGE RECT 1PHASE 50V 800MA MBM.	12305шт шт
GBJ2010-G Comchip Technology	BRIDGE RECT 1PHASE 1KV 20A GBJ.	12305шт шт
GBJ20005-G Comchip Technology	BRIDGE RECT 1PHASE 50V 20A GBJ.	12305шт шт
BR50005W-G Comchip Technology	BRIDGE RECT 1PHASE 50V 50A BR-W.	12304шт шт
BR50504W-G Comchip Technology	BRIDGE RECT 1PHASE 400V 50A BR-W.	12304шт шт
BR3510W-G Comchip Technology	BRIDGE RECT 1PHASE 1KV 35A BR-W.	12304шт шт
BR35005W-G Comchip Technology	BRIDGE RECT 1PHASE 50V 35A BR-W.	4069шт шт
BR2504W-G Comchip Technology	BRIDGE RECT 1PHASE 400V 25A BR-W.	12302шт шт
BR25005W-G Comchip Technology	BRIDGE RECT 1PHASE 50V 25A BR-W.	12302шт шт
BR1010W-G Comchip Technology	BRIDGE RECT 1PHASE 1KV 10A BR-W.	12302шт шт
BR1004W-G Comchip Technology	BRIDGE RECT 1PHASE 400V 10A BR-W.	12302шт шт
BR10005W-G Comchip Technology	BRIDGE RECT 1PHASE 50V 10A BR-W.	12301шт шт

Дыёды - Мастовыя выпрамнікі

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