Выява | Ключавая частка / Вытворца | Апісанне / PDF | Колькасць / RFQ |
---|---|---|---|
Samsung Semiconductor |
UFS 2.1 32 GB 1.8 / 3.3 V G3 2Lane 11.5 x 13 x 1.2 mm -40 ~ 85 °C Mass Production. |
17314шт шт |
|
Samsung Semiconductor |
UFS 2.1 32 GB 1.8 / 3.3 V G3 2Lane 11.5 x 13 x 1.2 mm -40 ~ 105 °C Mass Production. |
20468шт шт |
|
Samsung Semiconductor |
UFS 2.1 64 GB 1.8 / 3.3 V G3 2Lane 11.5 x 13 x 1.0 mm -25 ~ 85 °C Mass Production. |
23209шт шт |
|
Samsung Semiconductor |
UFS 2.1 64 GB 1.8 / 3.3 V G3 2Lane 11.5 x 13 x 1.0 mm -25 ~ 85 °C Mass Production. |
14362шт шт |
|
Samsung Semiconductor |
UFS 2.1 64 GB 1.8 / 3.3 V G3 2Lane 11.5 x 13 x 1.2 mm -40 ~ 85 °C Mass Production. |
14367шт шт |
|
Samsung Semiconductor |
UFS 2.1 64 GB 1.8 / 3.3 V G3 2Lane 11.5 x 13 x 1.2 mm -40 ~ 105 °C Mass Production. |
14685шт шт |
|
Samsung Semiconductor |
UFS 2.1 128 GB 1.8 / 3.3 V G3 2Lane 11.5 x 13 x 1.0 mm -25 ~ 85 °C Mass Production. |
16279шт шт |
|
Samsung Semiconductor |
UFS 2.1 128 GB 1.8 / 3.3 V G3 2Lane 11.5 x 13 x 1.2 mm -40 ~ 85 °C Mass Production. |
23289шт шт |
|
Samsung Semiconductor |
UFS 2.1 128 GB 1.8 / 3.3 V G3 2Lane 11.5 x 13 x 1.2 mm -40 ~ 105 °C Mass Production. |
14179шт шт |
|
Samsung Semiconductor |
UFS 2.1 256 GB 1.8 / 3.3 V G3 2Lane 11.5 x 13 x 1.72 mm -40 ~ 105 °C Mass Production. |
26335шт шт |
|
Samsung Semiconductor |
UFS 2.1 512 GB 1.8 / 3.3 V G3 2Lane 11.5 x 13 x 1.0 mm -25 ~ 85 °C Mass Production. |
22600шт шт |
|
Samsung Semiconductor |
UFS 2.1 1 TB 1.8 / 3.3 V G3 2Lane 11.5 x 13 x 1.4 mm -25 ~ 85 °C Mass Production. |
19948шт шт |
|
Samsung Semiconductor |
UFS 3.0 1 TB 1.2 / 2.5 V G4 2Lane 11.5 x 13 x 1.25 mm -25 ~ 85 °C Sample. |
17877шт шт |