Выява | Ключавая частка / Вытворца | Апісанне / PDF | Колькасць / RFQ |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4G PARALLEL 96TWBGA. DRAM 4G, 1.35V, 1600Mhz DDR3L SDAM |
8696шт шт |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TSOP. DRAM 512M, 3.3V, SDRAM, 64Mx8, 166Mhz, 54 pin TSOP II RoHS, T&R |
8714шт шт |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90TFBGA. DRAM 512M 16Mx32 166Mhz SDRAM, 3.3v |
8741шт шт |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 96TWBGA. DRAM 2G, 1.5V, 1600MT/s 128Mx16 DDR3 |
8765шт шт |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 96TWBGA. DRAM 2G, 1.35V, 1333Mhz DDR3 |
8765шт шт |
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 4.5M PARALLEL 165TFBGA. SRAM 4Mb 3.3V 7.5ns 128K x 36 Sync SRAM |
8772шт шт |
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 8M PARALLEL 90TFBGA. SRAM 8Mb 256Kx32 10ns Async SRAM |
8772шт шт |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 60TFBGA. DRAM 512M (16Mx32) 1.8v Mobile DDR SDRAM |
8782шт шт |
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 8M PARALLEL 48TSOP I. SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Pin TSOP I, ERR1/2 pins, RoHS |
8786шт шт |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TSOP. |
8809шт шт |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 96TWBGA. DRAM Automotive (Tc: -40 to +105C), 2G, 1.5V, DDR3, 128Mx16, 1600MT/s @ 11-11-11, 96 ball BGA (9mm x13mm) RoHS |
8812шт шт |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90TFBGA. DRAM 512M, 3.3V, SDRAM, 16Mx32, 143Mhz, 90 ball BGA (8mmx13mm) RoHS, T&R |
8815шт шт |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90TFBGA. DRAM 512M (16Mx32) Mobile DDR 1.8v |
8826шт шт |
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 16M PARALLEL 48TSOP I. SRAM 16Mb, Low Power/Power Saver,Async, 1Mb x 16/2Mb x 8, 45ns, 2.2v~3.6v,48 Pin TSOP I, RoHS |
8829шт шт |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 96TWBGA. DRAM Automotive (Tc: -40 to +105C), 2G, 1.35V, DDR3, 128Mx16, 1333MT/s @ 9-9-9, 96 ball BGA (9mm x13mm) RoHS |
8848шт шт |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90TFBGA. DRAM 512M, 2.5V, 133Mhz 16Mx32 Mobile SDR |
8860шт шт |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90TFBGA. DRAM 512M (16Mx32) 166MHz 1.8V Mobile SDR |
8883шт шт |
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 16M PARALLEL 48TSOP I. SRAM 16Mb,High-Speed,Async,1Mbx16, 8ns, 2.4v-3.6v, 48 Pin TSOP I, RoHS |
8893шт шт |
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 16M PARALLEL 54TSOP. SRAM 16Mb,High-Speed,Async,1Mbx16, 10ns, 2.4v-3.6v, 54 Pin TSOP II, RoHS |
8893шт шт |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 2G PARALLEL 84TWBGA. DRAM DDR2,2G,1.8V, RoHs 400MHz,128Mx16, IT |
8907шт шт |