| Выява | Ключавая частка / Вытворца | Апісанне / PDF | Колькасць / RFQ |
|---|---|---|---|
 |
Winbond Electronics |
IC FLASH 32M SPI 75MHZ 16SOIC. |
2884шт шт |
 |
Winbond Electronics |
IC FLASH 16M SPI 75MHZ 8WSON. |
2851шт шт |
|
Winbond Electronics |
IC FLASH 32M SPI 75MHZ 16SOIC. |
2818шт шт |
 |
Winbond Electronics |
IC FLASH 16M SPI 75MHZ 8SOIC. |
2786шт шт |
|
Winbond Electronics |
IC FLASH 16M SPI 75MHZ 8WSON. |
2769шт шт |
|
Winbond Electronics |
IC FLASH 16M SPI 75MHZ 8SOIC. |
2737шт шт |
|
Winbond Electronics |
IC FLASH 16M SPI 75MHZ 16SOIC. |
2639шт шт |
|
Winbond Electronics |
IC FLASH 16M SPI 75MHZ 16SOIC. |
2624шт шт |
 |
Winbond Electronics |
IC DRAM 256M PARALLEL 90TFBGA. DRAM 256M SDR SDRAM x32, 166MHz, Ind Temp |
13852шт шт |
 |
Winbond Electronics |
IC FLASH 4G PARALLEL 48TSOP. NAND Flash 4G-bit NAND flash, 3V x 8bit |
14572шт шт |
|
Winbond Electronics |
IC FLASH 4G PARALLEL 48TSOP. NAND Flash 4G-bit NAND flash, 3V, 4-bit ECC, 3V, x8 |
14572шт шт |
 |
Winbond Electronics |
IC FLASH 4G PARALLEL 63VFBGA. NAND Flash 4G-bit NAND flash, 1.8V, 4-bit ECC, 1.8V, x8 |
15273шт шт |
|
Winbond Electronics |
IC FLASH 4G PARALLEL 63VFBGA. NAND Flash 4G-bit NAND flash, 1.8V, 4-bit ECC, 1.8V, x16 |
15273шт шт |
|
Winbond Electronics |
IC FLASH 4G PARALLEL 63VFBGA. NAND Flash 4G-bit NAND flash, 3V, 4-bit ECC, 3V, x8 |
15801шт шт |
|
Winbond Electronics |
IC FLASH 4G PARALLEL 63VFBGA. NAND Flash 4G-bit NAND flash, 3V x 8bit |
15801шт шт |
|
Winbond Electronics |
IC DRAM 256M PARALLEL 90TFBGA. DRAM 256M SDR SDRAM x32, 166MHz, Ind Temp T&R |
16033шт шт |
 |
Winbond Electronics |
IC DRAM 1G PARALLEL 168WFBGA. DRAM 1Gb LPDDR2, x32, 400MHz, -25 85C |
17250шт шт |
|
Winbond Electronics |
IC DRAM 1G PARALLEL 168WFBGA. DRAM 1Gb LPDDR2, x16, 400MHz, -40 85C |
17250шт шт |
|
Winbond Electronics |
IC DRAM 1G PARALLEL 168WFBGA. DRAM 1Gb LPDDR2, x16, 400MHz, -25 85C |
17250шт шт |
|
Winbond Electronics |
IC DRAM 1G PARALLEL 168WFBGA. DRAM 1Gb LPDDR2, x32, 400MHz, -40 85C |
17250шт шт |
success