Microchip Technology SST25PF040C 4Mbit 2.3-3.6V SPI Serial Flash
Microchip Technology SST25PF040C 4Mbit 2.3-3.6V SPI Serial Flash feature a four-wire, SPI-compatible interface. This allows a low pin-count package which occupies less board space to lower system costs. The SST25PF040C devices are enhanced with extended operating voltage of 2.3-3.6V. These devices are manufactured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.
Features
Single Voltage Read and Write Operations 2.3-3.6VSerial Interface Architecture SPI Compatible: Mode 0 and Mode 3High Speed Clock Frequency 40MHzDual Input/Output Support
Fast-Read Dual-Output Instruction (3BH)Fast-Read Dual I/O Instruction (BBH)Superior Reliability
Endurance: 100,000 CyclesGreater than 20 years Data RetentionUltra-Low Power Consumption:
Active Read Current: 5mA (typical)Standby Current: 5µA (typical)Power-down Mode Standby Current: 3µA (typical)Flexible Erase Capability
Uniform 4KByte sectorsUniform 64KByte overlay blocksFast Erase and Page-Program
Chip-Erase Time: 250 ms (typical)Sector-Erase Time: 40 ms (typical)Block-Erase Time: 80 ms (typical)Page-Program Time: 4 ms/ 256 bytes (typical)
Fast-Read Dual-Output Instruction (3BH)Fast-Read Dual I/O Instruction (BBH)Superior Reliability
Endurance: 100,000 CyclesGreater than 20 years Data RetentionUltra-Low Power Consumption:
Active Read Current: 5mA (typical)Standby Current: 5µA (typical)Power-down Mode Standby Current: 3µA (typical)Flexible Erase Capability
Uniform 4KByte sectorsUniform 64KByte overlay blocksFast Erase and Page-Program
Chip-Erase Time: 250 ms (typical)Sector-Erase Time: 40 ms (typical)Block-Erase Time: 80 ms (typical)Page-Program Time: 4 ms/ 256 bytes (typical)
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