Выява | Ключавая частка / Вытворца | Апісанне / PDF | Колькасць / RFQ |
---|---|---|---|
Samsung Semiconductor |
DDR4 RDIMM 64 GB 2R x 4 2933 Mbps 1.2 V 288 (4G x 4) x 36 Sample. |
26222шт шт |
|
Samsung Semiconductor |
DDR4 RDIMM 64 GB 4R x 4 2133 Mbps 1.2 V 288 (2H 3DS 8G x 4) x 36 Mass Production. |
17389шт шт |
|
Samsung Semiconductor |
DDR4 RDIMM 64 GB 4R x 4 2400 Mbps 1.2 V 288 (2H 3DS 8G x 4) x 36 Mass Production. |
20449шт шт |
|
Samsung Semiconductor |
DDR4 RDIMM 64 GB 4R x 4 2666 Mbps 1.2 V 288 (2H 3DS 8G x 4) x 36 Mass Production. |
22914шт шт |
|
Samsung Semiconductor |
DDR4 RDIMM 64 GB 4R x 4 2400 Mbps 1.2 V 288 (2H 3DS 8G x 4) x 36 Mass Production. |
26035шт шт |
|
Samsung Semiconductor |
DDR4 RDIMM 128 GB 4R x 4 3200 Mbps 1.2 V 288 (3DS 2H 8G x 4) x 36 Sample. |
21143шт шт |
|
Samsung Semiconductor |
DDR4 RDIMM 128 GB 4R x 4 2933 Mbps 1.2 V 288 (3DS 2H 8G x 4) x 36 Sample. |
26682шт шт |
|
Samsung Semiconductor |
DDR4 RDIMM 128 GB 4R x 4 2933 Mbps 1.2 V 288 (3DS 2H 8G x 4) x 36 Sample. |
16560шт шт |
|
Samsung Semiconductor |
DDR4 RDIMM 128 GB 8R x 4 2400 Mbps 1.2 V 288 (4H 3DS 8G x 4) x 36 Mass Production. |
14943шт шт |
|
Samsung Semiconductor |
DDR4 RDIMM 128 GB 8R x 4 2666 Mbps 1.2 V 288 (4H 3DS 8G x 4) x 36 Mass Production. |
24090шт шт |
|
Samsung Semiconductor |
DDR4 RDIMM 256 GB 8R x 4 3200 Mbps 1.2 V 288 (3DS 4H 16G x 4) x 36 Sample. |
22211шт шт |
|
Samsung Semiconductor |
DDR4 RDIMM 256 GB 8R x 4 2933 Mbps 1.2 V 288 (3DS 4H 16G x 4) x 36 Sample. |
24718шт шт |
|
Samsung Semiconductor |
DDR4 RDIMM 256 GB 8R x 4 2933 Mbps 1.2 V 288 (3DS 4H 16G x 4) x 36 Sample. |
16672шт шт |
|
Samsung Semiconductor |
DDR3 RDIMM 8 GB 1R x 4 1600 Mbps 1.5 V / 1.35 V 240 (1G x 4) x 18 Mass Production. |
21396шт шт |
|
Samsung Semiconductor |
DDR3 RDIMM 8 GB 1R x 4 1866 Mbps 1.5 V / 1.35 V 240 (1G x 4) x 18 Mass Production. |
16668шт шт |
|
Samsung Semiconductor |
DDR3 RDIMM 8 GB 1R x 4 1600 Mbps 1.5 V / 1.35 V 240 (1G x 4) x 18 Mass Production. |
18214шт шт |
|
Samsung Semiconductor |
DDR3 RDIMM 8 GB 1R x 4 1866 Mbps 1.5 V / 1.35 V 240 (1G x 4) x 18 Mass Production. |
27010шт шт |
|
Samsung Semiconductor |
DDR3 RDIMM 8 GB 2R x 8 1600 Mbps 1.5 V / 1.35 V 240 (512M x 8) x 18 Mass Production. |
26981шт шт |
|
Samsung Semiconductor |
DDR3 RDIMM 8 GB 2R x 8 1866 Mbps 1.5 V / 1.35 V 240 (512M x 8) x 18 Mass Production. |
26714шт шт |
|
Samsung Semiconductor |
DDR3 RDIMM 8 GB 2R x 8 1600 Mbps 1.5 V / 1.35 V 240 (512M x 8) x 18 Mass Production. |
25454шт шт |